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| VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7991 Features * Maximum Rise/Fall Times of 38ps * High-Speed Operation (Up to 10.7Gb/s NRZ Data) * Differential Inputs SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver * Single-Supply * CML-Compatible Data Inputs * On-Chip 50 Input Terminations * 50 Output Impedance General Description The VSC7991 is a single 7V supply, 10.7Gb/s Electroabsorption Modulator (EAM)/laser diode driver with direct access to the laser modulation FETs. Laser offset and modulation currents are set by external components allowing precision monitoring and setting of the voltage levels. Data inputs are differentially terminated to 50. Applications * SONET/SDH @ 2.488Gb/s, 9.952Gb/s, 10.7Gb/s VSC7991 Block Diagram 60(1) 60(1) 50(1) DIN 50(1) NDOUT DOUT 300(1) NDIN DCC Note: (1) On-die components. VIP IMOD 300(1) IB IBN IP G52321-0, Rev 2.3 02/26/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 1 VITESSE SEMICONDUCTOR CORPORATION SDH/SONET 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Advance Product Information VSC7991 AC Characteristics (Over recommended operating conditions) Table 1: High Speed Inputs /Outputs Symbol IRL ORL Parameter Input Return Loss, 50 System Output Return Loss, 50 System Min Typ -15 -12 Max Units dB dB Conditions 50MHz to 10GHz 50MHz to 10GHz Table 2: Laser Driver AC Electrical Specifications Symbol tR tF Jitter Parameter Output Rise and Fall Times Output Jitter Overshoot/Undershoot Duty-Cycle Min Typ Max 38 15 +10 +25 Units ps ps/p-p % % Conditions 50 load, 20% to 80%, VMOD = 3V 50 Load, VMOD = 3V DCC in the range of VSS - 0.5V to VSS +2V -10 -25 DC Characteristics (Over recommended operating conditions) Table 3: Power Dissipation Symbol IVSS PD Parameter Power Supply Current (VSS) Total Power Dissipation Min Typ 300 2040 Max 330 2244 Units mA mW Conditions VSS = -6.8, RL = 50 to GND, IMOD = 120mA, VBIAS = 0V VSS = -6.8, RL = 50 to GND IMOD = 120mA, VBIAS = 0V Table 4: Laser Driver DC Electrical Specifications Symbol VBIAS VMOD VOCM IB, IBN VIP VIH VIL VSW (1) Parameter Programmable Output Offset Voltage Modulation Voltage Amplitude Output Voltage Compliance Laser Bias Control Voltage Laser Modulation Control Voltage Input High Voltage Input Low Voltage Input Voltage Swing Duty-Cycle Control Min -0.8 1.5 Typ Max 0 3 0 VSS + 0.7 0 -0.60 1000 VSS+ 2V Units V V V V V mV V mVp-p Conditions -10 VSS -150 -1.00 450 VSS - 0.5V 4 DCC NOTE: DIN and NDIN inputs need to be driven differentially. If single-ended drive is desired, it is necessary to add a DC bias to the unused pin. Page 2 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com G52321-0, Rev 2.3 02/26/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7991 Absolute Maximum Ratings(1) SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Negative Power Supply Voltage (VSS).............................................................................................. VCC to -8.0V All Pins ................................................................................................................................................VSS to + .5V Supply Voltage (VSS) ......................................................................................................................................... 8V Supply Current (ISS) .................................................................................................................................... 500mA Input Voltage (VIN)........................................................................................................................................ -2.0V Output Voltage (VOUT)................................................................................................................................. -4.0V Modulation Control Voltage (VIP).........................................................................................................VSS - 0.5V Output Offset Control Voltage (IB, IBN) ..........................................................................................................11V Output Offset Control Current (IIB) .............................................................................................................. 50mA Maximum Junction Temperature Range ..................................................................................... -55C to +125C Storage Temperature Range: ....................................................................................................... -55C to +125C Note: (1) CAUTION: Stresses listed under "Absolute Maximum Ratings" may be applied to devices one at a time without causing permanent damage. Functionality at or above the values listed is not implied. Exposure to these values for extended periods may affect device reliability. Recommended Operating Conditions Positive Voltage Rail (GND) .............................................................................................................................. 0V Negative Voltage Rail (VSS)........................................................................................................... -6.5V to -7.2V Operational Case Temperature (TC1) ...................................................................................................0C to 75C G52321-0, Rev 2.3 02/26/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 3 Page 4 2354m (0.0927") GND Pad 39 GND Pad 1 NDIN Pad 2 50m GND Pad 40 GND Pad 41 VSS Pad 42 VSS Pad 43 VSS Pad 44 VSS Pad 45 GND Pad 46 GND Pad 47 GND Pad 48 IB Pad 34 IB Pad 35 GND Pad 36 GND Pad 37 GND Pad 38 GND Pad 33 Bare Die Descriptions DOUT Pad 32 (0.002") GND Pad 3 GND Pad 4 GND Pad 5 GND Pad 6 GND Pad 7 DIN Pad 8 GND Pad 9 GND Pad 19 VIP Pad 18 VSS Pad 17 VSS Pad 16 VSS Pad 15 VSS Pad 14 DCC Pad 13 GND Pad 12 GND Pad 11 NC Pad 10 GND Pad 31 GND Pad 30 SDH/SONET 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver 1754m (0.0691") GND Pad 29 VSC7991 GND Pad 28 GND Pad 27 Figure 1: Pad Assignments NDOUT Pad 26 VITESSE SEMICONDUCTOR CORPORATION GND Pad 25 IBN Pad 24 IBN Pad 23 IP Pad 22 IP Pad 21 GND Pad 20 NOTE: All dimensions are in micrometers. The 48 pads specified in the pad coordinates were merged into 24 larger pads. 50m (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com (0.002") Advance Product Information Die Size: 2354m x 1754m (0.0927" x 0.0691") Die Thickness: 381m (0.015") Pad Pitch: 150m (0.0059") Pad Size: 116m x 116m (0.0046" x 0.0046") Pad Passivation Opening: 100m x 100m (0.0039" x 0.0039") Scribe Size: 50m (0.002") VSC7991 G52321-0, Rev 2.3 02/26/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7991 Table 5: Pad Coordinates Pad Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Signal Name GND NDIN GND GND GND GND GND DIN GND NC GND GND VDCC VSS VSS VSS VSS VIP GND GND IP IP IBN IBN Coordinates (m) X 2296 2296 2296 2296 2296 2296 2296 2296 2296 2296 2146 1996 1846 1696 1546 1396 1246 1027 808 658 508 358 208 58 Y 1546 1396 1246 1061.5 877 692.5 508 358 208 58 58 58 58 58 58 58 58 58 58 58 58 58 58 58 Pad Number 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 Signal Name GND NDOUT GND GND GND GND GND DOUT GND IB IB GND GND GND GND GND GND VSS VSS VSS VSS GND GND GND Coordinates (m) X 58 58 58 58 58 58 58 58 58 58 208 358 508 658 808 958 1108 1258 1408 1558 1708 1858 2008 2158 Y 208 358 508 692.5 877 1061.5 1246 1396 1546 1696 1696 1696 1696 1696 1696 1696 1696 1696 1696 1696 1696 1696 1696 1696 G52321-0, Rev 2.3 02/26/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 5 VITESSE SEMICONDUCTOR CORPORATION SDH/SONET 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Advance Product Information VSC7991 Package Pin Descriptions Figure 2: Pin Identification GND GND GND GND 32 31 30 29 28 27 26 GND GND NDIN GND GND DIN GND GND 1 2 3 4 5 6 7 8 25 GND VSS VSS IB 24 23 22 GND GND DOUT GND GND NDOUT GND GND VSC7991 Top View 21 20 19 18 17 9 10 11 12 13 14 15 IBN GND DCC VSS VSS VIP IP Page 6 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com GND 16 G52321-0, Rev 2.3 02/26/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7991 Table 6: Pin Identifications Pin # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Name GND GND NDIN GND GND DIN GND GND GND DCC VSS VSS VIP IP IBN GND GND GND NDOUT GND GND DOUT GND GND GND IB GND GND VSS VSS GND GND Type Pwr Pwr In Pwr Pwr In Pwr Pwr Pwr In Pwr Pwr In In In Pwr Pwr Pwr Out Pwr Pwr Out Pwr Pwr Pwr In Pwr Pwr Pwr Pwr Pwr Pwr Level Pwr Pwr CML Pwr Pwr CML Pwr Pwr Pwr DC Pwr Pwr DC DC DC Pwr Pwr Pwr Pwr Pwr Pwr Pwr Pwr DC Pwr Pwr Pwr Pwr Pwr Pwr Positive Voltage Rail Positive Voltage Rail Description Complementary Data In Positive Voltage Rail Positive Voltage Rail Data In Positive Voltage Rail Positive Voltage Rail Positive Voltage Rail Duty-Cycle Control Voltage Negative Voltage Rail Negative Voltage Rail Modulation Control Voltage Modulation Current Monitor Data Offset Control Current (complementary) Positive Voltage Rail Positive Voltage Rail Positive Voltage Rail Laser Modulation Current Output (complementary) Positive Voltage Rail Positive Voltage Rail Laser Modulation Current Output Positive Voltage Rail Positive Voltage Rail Positive Voltage Rail Data Offset Control Current Positive Voltage Rail Positive Voltage Rail Negative Voltage Rail Negative Voltage Rail Positive Voltage Rail Positive Voltage Rail NOTE: A voltage HIGH on the data input (pin 6) corresponds to a voltage HIGH on the data output (pin 22). G52321-0, Rev 2.3 02/26/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 7 VITESSE SEMICONDUCTOR CORPORATION SDH/SONET 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Advance Product Information VSC7991 Package Information DIMS A A1 A2 D D1 E E1 L e b ddd CCC R1 R Shoulder TOL. REF 0.003 REF 0.010 0.005 0.010 0.005 0.005 REF TYP N/A N/A MAX 0.003 0.003 DIM 0.054 0.003 0.050 0.321 0.225 0.321 0.225 0.021 0.0256 0.011 0.004 0 - 10 0.004 0.005 0.005 0.020 All dimensions in inches. Page 8 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com G52321-0, Rev 2.3 02/26/01 VITESSE SEMICONDUCTOR CORPORATION Advance Product Information VSC7991 Ordering Information SONET/SDH 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver The order number for this product is formed by a combination of the device number, and package style. VSC7991 Device Type VSC7991: SONET/SDH 10.7Gb/s Laser Diode Driver xx Package Style CD: Metal Glass with Metal Lid--Formed Leads X : Bare Die Notice Vitesse Semiconductor Corporation ("Vitesse") provides this document for informational purposes only. This document contains pre-production information about Vitesse products in their concept, development and/or testing phase. All informaiton in this document, including descriptions of features, functions, performance, technical specifications and availability, is subject to change without notice at any time. Nothing contained in this document shall be construed as extending any warranty or promise, express or implied, that any Vitesse product will be available as described or will be suitable for or will accomplish any particular task. Vitesse products are not intended for use in life support appliances, devices or systems. Use of a Vitesse product in such applications without written consent is prohibited. G52321-0, Rev 2.3 02/26/01 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com Page 9 VITESSE SEMICONDUCTOR CORPORATION SDH/SONET 10.7Gb/s Electroabsorption Modulator/Laser Diode Driver Advance Product Information VSC7991 This page left intentionally blank. Page 10 (c) VITESSE SEMICONDUCTOR CORPORATION * 741 Calle Plano * Camarillo, CA 93012 Tel: (800) VITESSE * FAX: (805) 987-5896 * Email: prodinfo@vitesse.com Internet: www.vitesse.com G52321-0, Rev 2.3 02/26/01 |
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